SI4943CDY-T1-E3【PDF 2/10 页】MOSFET P-CH D-S 20V 8-SOIC

您好，
买卖IC网欢迎您。
请登录
免费注册

1页 [2页]3页 4页 5页 6页

New Product

Si4943CDY

Vishay Siliconix

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ. a

Max.

Unit

Static

Drain-Source Breakdown Voltage

V DS Temperature Coefficient

V GS(th) Temperature Coefficient

V DS

Δ V DS /T J

Δ V GS(th) /T J

V GS = 0 V, I D = - 250 μA

I D = - 250 μA

- 20

- 21

5.4

V

mV/°C

Gate Threshold Voltage

V GS(th)

V DS = V GS , I D = - 250 μA

-1

-3

V

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current b

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 20 V

V DS = - 20 V, V GS = 0 V

V DS = - 20 V, V GS = 0 V, T J = 55 °C

V DS = 5 V, V GS = - 10 V

- 30

- 100

-1

- 10

nA

μA

A

Drain-Source On-State Resistance b

Forward Transconductance b

R DS(on)

g fs

V GS = - 10 V, I D = - 8.3 A

V GS = - 4.5 V, I D = - 6.4 A

V DS = - 10 V, I D = - 8.3 A

0.0160

0.0275

19

0.0192

0.0330

Ω

S

Dynamic a

Input Capacitance

C iss

1945

Output Capacitance

Reverse Transfer Capacitance

C oss

C rss

V DS = - 10 V, V GS = 0 V, f = 1 MHz

460

385

pF

Total Gate Charge

Gate-Source Charge

Q g

Q gs

V DS = - 10 V, V GS = - 10 V, I D = - 8.3 A

V DS = - 10 V, V GS = - 4.5 V, I D = - 8.3 A

41

20

7

62

30

nC

Gate-Drain Charge

Q gd

9

Gate Resistance

R g

f = 1 MHz

0.5

2.5

5

Ω

Turn-On Delay Time

t d(on)

13

20

Rise Time

Turn-Off Delay Time

t r

t d(off)

V DD = - 10 V, R L = 1.5 Ω

I D ? - 6.7 A, V GEN = - 10 V, R g = 1 Ω

11

35

17

53

Fall Time

Turn-On Delay Time

t f

t d(on)

10

50

15

75

ns

Rise Time

Turn-Off Delay Time

Fall Time

t r

t d(off)

t f

V DD = - 10 V, R L = 1.5 Ω

I D ? - 6.7 A, V GEN = - 4.5 V, R g = 1 Ω

71

29

15

107

44

23

Drain-Source Body Diode Characteristics

Pulse Diode Forward Current

Continuous Source-Drain Diode

Current

a

I S

I SM

T C = 25 °C

- 2.5

- 30

A

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

V SD

t rr

Q rr

t a

t b

I S = - 6.7 A

I F = - 6.7 A, dI/dt = 100 A/μs, T J = 25 °C

- 0.77

30

17

13

17

- 1.2

45

26

V

ns

nC

ns

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 69985

S09-0704-Rev. B, 27-Apr-09

发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

*型号	*数量	厂商	批号	封装

添加更多采购

我的联系方式

*

*

*

相关PDF资料

SI4946BEY-T1-GE3 MOSFET N-CH D-S 60V 8-SOIC

SI4966DY-T1-GE3 MOSFET 2N-CH 20V 8SOIC

SI4972DY-T1-GE3 MOSFET N-CH DUAL 30V 8-SOIC

SI4973DY-T1-GE3 MOSFET 2P-CH 30V 5.8A 8SOIC

SI5040-D-GM IC TXRX XFP 10GBPS 32LGA

SI5402DC-T1-GE3 MOSFET N-CH D-S 30V 1206-8

SI5403DC-T1-GE3 MOSFET P-CH 30V 6A 1206-8

SI5432DC-T1-GE3 MOSFET N-CH 20V 6A 1206-8

相关代理商/技术参数

SI4943CDY-T1-GE3 功能描述:MOSFET 20V 8.0A 3.1W 19.2mohm @ 10V RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SI4943DY 功能描述:MOSFET 20V 8.4A 2W RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SI4943DY-E3 功能描述:MOSFET 20V 8.4A 2W RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SI4943DY-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 20V 6.3A 8-Pin SOIC N T/R

SI4943DY-T1-E3 功能描述:MOSFET 20 Volt 8.4 Amp 2.0W RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube

SI4944DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET

SI4944DY-T1 制造商:Vishay Semiconductors 功能描述:

SI4944DY-T1-E3 功能描述:MOSFET DUAL N-CH 30V (D-S) RoHS:否制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube